Bidirectional insulated-gate rectifier structures and method...

Details Bidirectional insulated-gate rectifier structures and method... Bidirectional insulated-gate rectifier structures and method...

H - Electricity

01

L

356/35

H01L 29/74 (2006.01) H01L 29/739 (2006.01)

Patent

CA 1200322

BIDIRECTIONAL INSULATED-GATE RECTIFIER STRUCTURES AND METHOD OF OPERATION ABSTRACT OF THE DISCLOSURE Bidirectional IGR structures include MOS gates at both the device anode and the device cathode, thereby allowing control of current conduction for both polari- ties of applied voltage. The bidirectional structures may alternatively be operated in an active anode shorting mode whereby higher switching speeds are achieved without either the loss of reverse blocking capability or decrease in forward current density.

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