Bilayer lithographic process

Details Bilayer lithographic process Bilayer lithographic process

G - Physics

03

F

356/132, 204/91.

G03F 7/00 (2006.01) G03C 5/00 (2006.01) G03F 7/09 (2006.01) G03F 7/40 (2006.01)

Patent

CA 1286424

-0- BILAYER LITHOGRAPHIC PROCESS ABSTRACT A method for producing high resolution patterned resist images having excellent etch resistance and superior thermal and dimensional stability comprises the steps of: (a) forming a planarizing layer resistant to silicon uptake on a substrate, (b) providing a positive-working photoresist composition containing -OH or NH- groups over the planarizing layer, (c) imagewise exposing the resist to activating radiation, (d) developing the exposed resist, (e) contacting the developed resist with a vapor comprising a silicon-containing compound to effect silylation thereof and thereby impart etch resistance, the silicon-containing compound having the structural formula: Image wherein: x1 and x2 are individually chloro or wherein R3 and R4 are individually H or alkyl; and R and R2 are individually H or alkyl; and (f) contacting the planarizing layer with an oxygen-containing plasma so as to preferentially remove portions thereof.

554108

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