G - Physics
03
F
96/266
G03F 7/00 (2006.01) G03F 7/09 (2006.01)
Patent
CA 1248403
- 20 - BILEVEL RESIST Abstract Excellent resolution in the lithographic fabrication of electronic devices is achieved with a specific bilevel resist. This bilevel resist includes an underlying layer formed with a conventional material such as a novolac resist baked at 200°C for 30 minutes and an overlying layer including a silicon containing material such as that formed by the condensation of formaldehyde with a silicon-substituted phenol. This bilevel resist has the attributes of a trilevel resist and requires significantly less processing.
481475
Reichmanis Elsa
Wilkins Cletus W. Jr.
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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