Binary germanium-silicon interconnect and electrode...

Details Binary germanium-silicon interconnect and electrode... Binary germanium-silicon interconnect and electrode...

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H01L 23/52 (2006.01) H01L 21/768 (2006.01) H01L 23/532 (2006.01) H01L 29/40 (2006.01)

Patent

CA 1183968

A BINARY GERMANIUM-SILICON INTERCONNECT AND ELECTRODE STRUCTURE FOR INTEGRATED CIRCUITS William I. Lehrer Bruce Deal ABSTRACT An interconnect structure for use in integrated circuits comprises a germanium-silicon binary alloy. Such an alloy is deposited on the semiconductor wafer from the co-deposition of germanium and silicon using chemical vapor deposition techniques of a type commonly used in the semiconductor industry. The resulting alloy can be oxidized, selectively removed and doped with selected impurities to provide a conductive lead pattern of a desired shape on the surface of a wafer.

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