Bipolar junction transistor exhibiting suppressed kirk effect

Details Bipolar junction transistor exhibiting suppressed kirk effect Bipolar junction transistor exhibiting suppressed kirk effect

H - Electricity

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H01L 29/73 (2006.01) H01L 21/265 (2006.01) H01L 21/331 (2006.01) H01L 21/8249 (2006.01) H01L 29/08 (2006.01)

Patent

CA 2124843

2124843 9317461 PCTABS00025 A bipolar junction transistor (BJT) which exhibits a suppressed Kirk Effect comprises a lightly-doped n-type collector region (11) formed above a more heavily-doped n+ layer (12). Directly above the collector is a p-type base which has an extrinsic region (17) disposed laterally about an intrinsic region (18). An n+ emitter (20) is positioned directly above the intrinsic base region. The BJT also includes a localized n+ region (15) disposed directly beneath the intrinsic base region which significantly increases the current handling capabilities of the transistor.

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