Bipolar memory cell

Details Bipolar memory cell Bipolar memory cell

G - Physics

11

C

352/82

G11C 11/40 (2006.01) H01L 21/82 (2006.01) H01L 23/522 (2006.01) H01L 27/04 (2006.01) H01L 27/102 (2006.01)

Patent

CA 1193725

BIPOLAR MEMORY CELL Abstract of the Disclosure A bipolar memory cell is fabricated by forming diodes 60 and 65 on top of the transistors Q1 and Q2 formed in the underlying substrate 10. Metal silicide 30 overlies strips 34 and 35 of doped polycrystalline silicon 25, 28, 37, and 38 to cross-couple the bases and collectors of the two transistors Q1 and Q2 forming the memory cell. The metal silicide 30 shorts PN junctions 29 in polycrystalline 23. Two further strips 50 and 52, each comprising a sand- wich of P type polycrystalline silicon 42, metal silicide 45, and N conductivity type polycrystalline silicon 47, are formed to couple the cross-coupled bases and collectors to respective diodes 60 and 65. The diodes 60 and 65 are formed by depositing metal 62 and 64 in electrical contact with the underlying N type polycrystalline silicon 47.

428526

Affiliated with

Also associated with

Rating

Bipolar memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bipolar memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1219769