Bipolar transistor

Details Bipolar transistor Bipolar transistor

H - Electricity

01

L

H01L 29/737 (2006.01) H01L 21/331 (2006.01)

Patent

CA 2407364

A bipolar transistor having base and collector regions of narrow bandgap semiconductor material and a minority- carrier excluding base contact has a base doping level greater than 10 17 cm- 3. The transistor has a greater dynamic range, greater AC voltage and power gain-bandwidth products and a lower base access resistance than prior art narrow band-gap bipolar transistors.

L'invention concerne un transistor bipolaire présentant des régions de base et de collecteur en matériau semi-conducteur à bande interdite étroite et un porteur minoritaire dépourvu de contact de base possédant un niveau de dopage de base supérieur à 10<17> cm<-3>. Le transistor possède une gamme dynamique supérieure, une tension alternative supérieure, des produits gain-bande de puissance et une résistance d'accès à la base inférieure à celle des transistors bipolaires à bande interdite étroite de l'art antérieur.

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