Bipolar transistor and method of fabricating the same

Details Bipolar transistor and method of fabricating the same Bipolar transistor and method of fabricating the same

H - Electricity

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H01L 21/331 (2006.01) H01L 27/082 (2006.01) H01L 29/161 (2006.01) H01L 29/167 (2006.01) H01L 29/73 (2006.01) H01L 29/737 (2006.01)

Patent

CA 2063220

ABSTRACT OF THE DISCLOSURE To eliminate misfit dislocation occurring in a hetero-interface and to provide a bipolar transistor capable of a high speed operation, the bipolar transistor is configured such that the energy band gap is progressively narrowing from park of an emitter layer towards part of a collector layer through a base layer.

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