Bipolar transistor memory cell and method

Details Bipolar transistor memory cell and method Bipolar transistor memory cell and method

G - Physics

11

C

G11C 11/411 (2006.01)

Patent

CA 2044361

Bipolar transistor memory cell and method for use in a random access memory. A pair of state elements are cross coupled so that they assume opposite states in accordance with signals applied thereto, a pair of bipolar pass transistors are connected to respective ones of the state elements for applying signals to the state elements, and current flow through the pass transistors is monitored to determine the states of the state elements.

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