Bipolar transistor stabilization structure

Details Bipolar transistor stabilization structure Bipolar transistor stabilization structure

H - Electricity

01

L

356/127

H01L 27/06 (2006.01) H01L 29/08 (2006.01) H01L 29/10 (2006.01) H01L 29/417 (2006.01)

Patent

CA 1118533

H. Y. S. Tang 1 BIPOLAR TRANSISTOR STABILIZATION STRUCTURE Abstract of the Disclosure A bipolar transistor structure consists of a standard structure and in addition consists of a low resistance-high impurity concentration region in the collector which contacts a nonactive portion of the base. The resistance between the base contact and the low resistance-high impurity concentration region of the collector, coupled with the capacitance between the two regions, results in the equivalent of a series R-C network between the base contact and the collector. The values of resistance and capacitance of this network are selected to attenuate instability during operation of the transistor. - i -

318420

Affiliated with

Also associated with

Rating

Bipolar transistor stabilization structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bipolar transistor stabilization structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar transistor stabilization structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-665615