Bipolar transistors and method of manufacturing the same

Details Bipolar transistors and method of manufacturing the same Bipolar transistors and method of manufacturing the same

H - Electricity

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H01L 29/72 (2006.01) H01L 21/033 (2006.01) H01L 21/31 (2006.01) H01L 21/311 (2006.01) H01L 21/3115 (2006.01) H01L 21/3215 (2006.01) H01L 21/331 (2006.01) H01L 29/732 (2006.01)

Patent

CA 1093703

ABSTRACT OF THE DISCLOSURE In a transistor, around border line of the surface of a base region formed on a semi- conductor the surface is formed a base electrode having polycrystalline silicon. An island shape emitter region is formed in the base region and on electrode is formed on the surface of the emitter region. The emitter electrode is electrically isolated from the base electrode by an insulating film extending between the periphery of the emitter region and the base electrode.

301731

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