Bipolar type static memory cell

Details Bipolar type static memory cell Bipolar type static memory cell

G - Physics

11

C

352/40, 352/82

G11C 11/40 (2006.01) G11C 11/411 (2006.01) H01L 21/74 (2006.01) H01L 27/02 (2006.01) H01L 27/07 (2006.01) H01L 27/102 (2006.01)

Patent

CA 1165875

BIPOLAR TYPE STATIC MEMORY CELL ABSTRACT OF THE DISCLOSURE A bipolar type static memory cell consisting of two circuits that are connected in a crossing manner, each of the circuits being composed of a transistor and a load element. An N-type epitaxial layer which is allowed to grow on an N+-type buried layer is used as a collector region of the transistor, a P-type layer formed in the N-type epitaxial layer and an N -type layer formed in the P-type layer are used as a base region and an emitter region of .he transistor. Further, a P-type diffusion layer is formed in the N-type epitaxial layer from the surface of the epitaxial layer to reach the buried layer.

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