Bit line powered translinear memory cell

Details Bit line powered translinear memory cell Bit line powered translinear memory cell

G - Physics

11

C

356/124, 352/82.

G11C 11/40 (2006.01) G11C 11/411 (2006.01) G11C 15/00 (2006.01)

Patent

CA 1189622

-11- BIT LINE POWERED TRANSLINEAR MEMORY CELL Abstract of the Disclosure A bit line powered translinear memory cell includes a pair of NPN transistors having cross-coupled bases and collectors. Diode loads couple the NPN transistors and to the bit lines. The emitters of the two transistors are coupled together and to a word line. Cell parasitic capacitances are used to maintain data in nonaddressed memory cells during reading of other cells coupled to the same word line.

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