Blue light emitting diode formed in silicon carbide

Details Blue light emitting diode formed in silicon carbide Blue light emitting diode formed in silicon carbide

H - Electricity

01

L

345/50

H01L 33/00 (2006.01)

Patent

CA 2005377

The present invention comprises a light emitting diode formed in silicon carbide and that emits visible light having a wavelength of between about 465- 470 nanometers, or between about 455-460 nanometers, or between about 424-428 nanometers. The diode comprises a substrate of alpha silicon carbide having a first conductivity type and a first epitaxial layer of alpha silicon carbide upon the substrate having the same conductivity type as the substrate. A second epitaxial layer of alpha silicon carbide is upon the first epitaxial layer, has the opposite conductivity type from the first layer, and forms a p-n junction with the first epitaxial layer. In preferred embodiments, the first and second epitaxial layers have carrier concentrations sufficiently different from one another so that the amount of hole current and electron current that flow across the junction under biased conditions are different from one another and so that the majority of recombination events take place in the desired epitaxial layer.

Affiliated with

Also associated with

Rating

Blue light emitting diode formed in silicon carbide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Blue light emitting diode formed in silicon carbide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Blue light emitting diode formed in silicon carbide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1979712