Bonded cathode and electrode structure with layered...

Details Bonded cathode and electrode structure with layered... Bonded cathode and electrode structure with layered...

H - Electricity

01

J

313/163, 316/46,

H01J 1/48 (2006.01) H01J 19/42 (2006.01)

Patent

CA 1122256

Abstract of the Disclosure The variety of technologies that have been applied in the development of a bonded grid cathode are described. These include chemical vapor deposition of tungsten, molybdenum, iridium, BN, and Si3N4 on both sides of a sintered tungsten cathode disk. Zirconium and titanium getters have been used to elimi- nate nitrogen evolution problems. Films of Si3N4 have been added to the insulation to prevent calcium and barium diffusion into the layer and maintain adequate resistivity and breakdown strength. Plasma etching was introduced as a method of removing Si3N4 from the cathode pores.

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