Bonding-activating operation to manufacture semiconductor...

H - Electricity – 01 – L

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H01L 21/463 (2006.01) H01L 21/20 (2006.01) H01L 21/58 (2006.01) H01L 21/762 (2006.01) H01L 21/822 (2006.01) H01L 25/065 (2006.01)

Patent

CA 1245776

ABSTRACT: A method for manufacturing a semiconductor device com- prising at least a support body (1) and a monocrystalline semicon- ductor body (6,7), in which both bodies are provided with at least one flat optically smooth surface obtained by means of bulk-reducing polishing (mirror polishing) and at least the semiconductor body (6,7) is then provided at the optically smooth surface with an elec- trically insulating layer (4), at least the electrically insulating layer on the semiconductor body being subjected to a bonding-activat- ing operation, whereupon both bodies (1;6,7), after their flat sur- faces have been cleaned, are contacted with each other in a dust-free atmosphere in order to obtain a rigid mechanical connection, after which they are subjected to a heat treatment of at least 350°C, whereupon the semiconductor body (6,7) is etched to a thin layer (7) having a predetermined value lying between 0.05 and 100µm.

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