Boron doped diamond

Details Boron doped diamond Boron doped diamond

C - Chemistry, Metallurgy

30

B

C30B 25/10 (2006.01) C30B 29/04 (2006.01)

Patent

CA 2469150

A layer of single crystal boron doped diamond produced by CVD and having a total boron concentration which is uniform. The layer is formed from a single growth sector, or has a thickness exceeding 100 (m, or has a volume exceeding 1 mm3, or a combination of such characteristics.

Couche de diamant dopé au bore monocristallin produit par CVD et présentant une concentration de bore totale uniforme. La couche est formée à partir d'un secteur de tirage unique, ou elle présente une épaisseur dépassant 100 µm, ou bien elle présente un volume dépassant 1 mm?3¿, ou bien une combinaison de ces caractéristiques.

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