Boron doping of semiconductors

Details Boron doping of semiconductors Boron doping of semiconductors

C - Chemistry, Metallurgy

30

B

31/113, 261/13

C30B 1/00 (2006.01) C03C 3/04 (2006.01) C03C 3/064 (2006.01) C03C 3/091 (2006.01) C03C 10/00 (2006.01) C30B 31/16 (2006.01) H01L 21/223 (2006.01)

Patent

CA 1061100

Abstract of the Disclosure Disclosed is a method for diffusion doping of silicon and germanium semiconductors by the vapor phase transport of B2O3 from a solid B2O3 source to the semiconductor, wherein the solid B2O3 source comprises a rigid, dimensionally stable, glass-ceramic body formed from certain alkaline earth aluminoborosilicate parent glass compositions. The glass- ceramic bodies contain up to 60 mole % of B2O3 and are dimensionally stable at doping temperatures of 1050°C and higher.

236611

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