Bottom electrode structure for integrated circuit capacitors...

Details Bottom electrode structure for integrated circuit capacitors... Bottom electrode structure for integrated circuit capacitors...

H - Electricity

01

L

H01L 27/00 (2006.01) H01L 21/02 (2006.01) H01L 21/77 (2006.01) H01L 23/532 (2006.01) H01L 27/115 (2006.01)

Patent

CA 2223106

A thin-film ferroelectric capacitor (20) includes a bottom electrode structure (26) having an adhesion metal layer (36) and a noble metal portion (38). The electrode (26) is deposited over a thin-film buffer layer (24), which contains a layered superlattice material. The buffer layer is interposed between a substrate (22) and the bottom electrode (26). A process of manufacture includes deposition of a liquid precursor on the substrate (22) prior to formation of the bottom electrode (26).

L'invention concerne un condensateur ferroélectrique à couche mince (20) comportant une électrode de base (26) présentant une couche métallique d'adhérence (36) et une partie en métal précieux (38). L'électrode (26) est déposée sur une couche intermédiaire mince (24) contenant un matériau à super-réseau stratifié. La couche intermédiaire est interposée entre un substrat (22) et l'électrode de base (26). Un procédé de fabrication consiste à déposer un précurseur liquide sur le substrat (22) avant la formation de l'électrode de base (26).

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