Branched monoalkyl group v a compounds as mocvd element sources

Details Branched monoalkyl group v a compounds as mocvd element sources Branched monoalkyl group v a compounds as mocvd element sources

C - Chemistry, Metallurgy

30

B

117/85, 148/2.4

C30B 25/02 (2006.01) C23C 16/40 (2006.01) C30B 29/40 (2006.01) H01L 21/205 (2006.01) H01L 21/316 (2006.01)

Patent

CA 1322935

0,294 BRANCHED MONOALKYL GROUP V A COMPOUNDS AS MOCVD ELEMENT SOURCES ABSTRACT OF THE DISCLOSURE A process to produce one or more Group III A- V A element epitaxial layers over a crystalline sub- strate by reacting Group III A metalorganic vapors and a Group V A compound vapors on a heated substrate to form the epitaxial layers. These do not combine to form stable parasitic adducts if, as the Group V A compound vapor source, there is used a branched monoalkyl Group V A compound, the alkyl groups containing from about 3 to about 10 carbon atoms. In an embodiment, a phospho- silicate or an arsenosilicate glass is deposited on a semiconductor substrate when branched monoalkyl Group V A compounds are vaporized and reacted with sources of sili- con and oxygen on the heated substrate.

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