Bridged emitter doped-silicide transistor

Details Bridged emitter doped-silicide transistor Bridged emitter doped-silicide transistor

H - Electricity

01

L

356/162

H01L 29/73 (2006.01) H01L 21/225 (2006.01) H01L 21/331 (2006.01) H01L 27/082 (2006.01) H01L 29/423 (2006.01)

Patent

CA 1306814

BRIDGED-EMITTER DOPED-SILICIDE TRANSISTOR ABSTRACT OF THE DISCLOSURE A bridged-emitter doped-silicide transistor is formed using two orthogonal strips of electrically conductive material containing impurity which is introduced into the substrate after the strips are defined. The emitter is formed by impurity diffusing from a first strip into a silicon substrate in which the base region and collector region have previously been formed. The base electrode and contact regions to the extrinsic base are formed by impurity diffusing from a second strip, preferably boron-doped silicide, which is separated from the first strip by intervening insulating material.

615270

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