Broad-band quantum well infrared photodetectors

Details Broad-band quantum well infrared photodetectors Broad-band quantum well infrared photodetectors

H - Electricity

01

L

H01L 27/14 (2006.01) H01L 27/146 (2006.01) H01L 31/00 (2006.01) H01L 31/0352 (2006.01) H01L 31/103 (2006.01)

Patent

CA 2311629

A quantum well (200) can be designed to detect light of a particular wavelength by tailoring the potential depth and width of the well (202). The design produces two energy states (210, 208) in the well (202) separated by the desired photon energy. The GaAs/Al x Ga~-x As material system allows the quantum well shape to be varied over a range wide enough to enable light detection at wavelengths longer than approximately 6 mm. Hence, large bandgap materials such as GaAs/Al x Ga1-x As material has made fabrication of a large focal plane arrays tuned to detect light at wavelengths from 6 to 25 mm possible.

La présente invention concerne les techniques de réalisation d'un puits quantique (200) capable de détecter la lumière d'une longueur d'ondes particulière, et ce, en jouant notamment sur les potentiels de largeur et de profondeur du puits (202). Par conception, il se crée dans le puits (202) deux états d'énergie (210, 208) séparés par l'énergie photonique attendue. Le système GaAs/AlxGa1-xAs permet de jouer suffisamment sur la forme du puits quantique pour rendre possible la détection de lumière à des longueurs d'ondes supérieures à environ 6 mm. Il en découle que des matériaux à grande bande interdite tels que le GaAs/AlxGa1-xAs permettent désormais la réalisation d'une matrice plane à grande focale accordée pour la détection de lumière dans des longueurs d'ondes allant de 6 mm à 25 mm.

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