Buffer structure between silicon carbide and gallium nitride...

Details Buffer structure between silicon carbide and gallium nitride... Buffer structure between silicon carbide and gallium nitride...

H - Electricity

01

L

H01L 21/20 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2177465

A transition crystal structure is disclosed for providing a good lattice and thermal match between a layer of single crystal silicon carbide (25) and a layer of single crystal gallium nitride (24). The transition structure comprises a buffer formed of a first layer of gallium nitride and aluminum nitride (22). and a second layer of gallium nitride and aluminum nitride (23) adjacent to the first layer. The mole percentage of aluminum nitride in the second layer (23) is substantially different from the mole percentage of aluminum nitride in the first layer (22). A layer of single crystal gallium nitride (24) is formed upon the second layer of gallium nitride and aluminum nitride. In preferred embodiments the buffer further comprises an epitaxial layer of aluminum nitride upon a silicon carbide substrate.

L'invention a pour objet une structure cristalline de transition permettant d'harmoniser le réseau et les caractéristiques thermiques d'une couche de carbure de silicium monocristallin (25) et d'une couche de nitrure de gallium monocristallin (24). La structure cristalline de transition comprend un tampon constitué d'une première couche de nitrure de gallium et de nitrure d'aluminium (22) et d'une seconde couche de nitrure de gallium et de nitrure d'aluminium (23), adjacente à la première. La seconde couche (23) présente un pourcentage molaire de nitrure d'aluminium nettement différent de celui de la première couche (22). Une couche de nitrure de gallium monocristallin (24) est formée sur la seconde couche de nitrure de gallium et de nitrure d'aluminium. Dans des modes préférés de réalisation, le tampon comprend en outre une couche épitaxiale de nitrure d'aluminium sur un substrat de carbure de silicium.

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