Bulk avalanche semiconductor laser

Details Bulk avalanche semiconductor laser Bulk avalanche semiconductor laser

H - Electricity

01

S

345/32

H01S 5/32 (2006.01) H01S 3/094 (2006.01) H01S 5/30 (2006.01)

Patent

CA 1294693

ABSTRACT OF THE DISCLOSURE A bulk semiconductor laser which uses optically triggered avalanche conduction to initiate the lasing action in the bulk. A semiconductor block has electrodes coupled on opposing sides and a high voltage is applied across the electrodes which is less than the voltage required for avalanche breakdown. The block is irradiated with light which produces charge carriers in the block to initiate avalanche conduction, which results in a large number of charge carriers. The charge carriers recombine to generate a second amount of electromagnetic radiation. This radiation is reflected back into the block on two opposing sides, thus resulting in a laser emission.

579948

Affiliated with

Also associated with

Rating

Bulk avalanche semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bulk avalanche semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bulk avalanche semiconductor laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1177046