Bulk charge coupled device

G - Physics – 11 – C

Patent

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Details

352/82.21

G11C 11/40 (2006.01) H01L 27/105 (2006.01) H01L 29/10 (2006.01) H01L 29/768 (2006.01)

Patent

CA 1059627

ABSTRACT: The invention relates to a charge-coupled device in which the charge transport in the form of majority charge carriers takes place mainly via the bulk of a semiconductor layer of one conductivity type. The semiconductor layer has zones of the second conduct- ivity type which do not have an electric contact but which are electrically biased by means of the isolation zone surrounding the semiconductor layer which can be connected to the zones by induction by means of the electrodes and forms a drain for charge carriers from the zones. In an embodiment the device is formed by a two-phase charge-coupled device in which the zones serve to obtain asymmetry in the system. In another embodiment the device is a series-parallel-series multiplex CTD in which the zones form isolation zones between the parallel lines. - 43 -

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