Bulk charge coupled device with high doping at buried...

Details Bulk charge coupled device with high doping at buried... Bulk charge coupled device with high doping at buried...

H - Electricity

01

L

352/82.21

H01L 27/04 (2006.01) H01L 29/10 (2006.01) H01L 29/768 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1046638

ABSTRACT: The invention relates to a charge-coupled device in which the charge transport takes place in the form of majority charge carriers via the bulk of a surface layer of the first conductivity type which forms a p-n junction with a substrate of the second conductivity type. The comparatively thick and high-ohmic surface layer has a comparatively thin low-ohmic buried zone of the first conductivity type which adjoins the said p-n junction. The buried zone forms a buffer layer against the depletion zone belonging to the p-n junction. Without detrimentally influencing the transport properties, a low-ohmic substrate may be used, which has important advantages in particular with respect to the leakage currents. -31-

219519

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