G - Physics – 11 – C
Patent
G - Physics
11
C
352/82.25
G11C 11/40 (2006.01) G11C 19/28 (2006.01) H01L 29/10 (2006.01) H01L 29/423 (2006.01) H01L 29/768 (2006.01) H03K 3/353 (2006.01)
Patent
CA 1061903
ABSTRACT OF THE DISCLOSURE A charge coupled transfer arrangement in which majority carriers are used for the charge transfer, in particular according to the peristaltic principle or according to the buried channel principle for the storage movement of electrical charges in a predetermined direction comprises a thin doped semiconductor layer on a high resistive material and a layer of insulating material arranged on the semiconductor layer. The insulating layer has a plurality of individual electrode arrange- ments disposed thereon for the movement of charges, the electrode arrangements being arranged in a row parallel to the predeter- mined direction of movement. Electrodes are also provided for charge input and charge output. Each electrode arrangement comprises at least two electrodes separated by a gap and extending parallel to the predetermined direction. The arrange- ments according to the invention are constructed in a simpler manner than prior art arrangements and avoid, during production, additional method steps for the insulation of the transfer channel with respect to its surroundings. The invention has the advantage that the electrodes can be applied over a homogeneously doped semiconductor layer.
217263
Aktiengesellschaft Siemens
Na
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