H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/28 (2006.01) H01L 29/20 (2006.01) H01L 29/40 (2006.01) H01S 5/00 (2006.01) H01L 33/00 (2006.01)
Patent
CA 2638191
A semiconductor device comprising: a substrate; a first contact; a first layer of doped semiconductor material deposited on the substrate; a semiconductor junction region deposited on the first layer; a second layer of doped semiconductor material deposited on the junction region, the second layer having opposite semiconductor doping polarity to that of the first layer; and a second contact; wherein the second contact is in electrical communication with the second layer and the first contact is embedded within the semiconductor device between the substrate and the junction region and is in electrical communication with the first layer;; and processes for manufacture of an embedded contact semiconductor device.
Butcher Kenneth Scott Alexander
Fernandes Alanna Julia June
Wintrebert Ep Fouquet Marie-Pierre Francoise
Fasken Martineau Dumoulin Llp
Gallium Enterprises Pty Ltd
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