Buried hall element

H - Electricity – 01 – L

Patent

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356/94

H01L 43/06 (2006.01) H01L 27/22 (2006.01)

Patent

CA 1249667

Abstract of the Disclosure A Hall element incorporated inside a semiconductor body has a P-N junction barrier which surrounds the active zone of the Hall element in all directions. The output of the Hall element is connected through a feedback control circuit to control the thickness of the P-N junction barrier, thereby ensuring long duration, temperature stability and linearity for the Hall element. - 37 -

509531

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