Buried-type semiconductor laser device

Details Buried-type semiconductor laser device Buried-type semiconductor laser device

H - Electricity

01

S

H01S 5/227 (2006.01) H01S 3/06 (2006.01) H01S 5/323 (2006.01) H01S 3/025 (1995.01)

Patent

CA 2085337

This invention provides a buried-type semiconductor laser device that operates stably and reliably at a high temperature for a prolonged period of time. A buried-type semiconductor laser device according to the invention comprises a semiconductor substrate 2, a first ridge mesa 8 formed on said substrate 2, said first ridge mesa 8 being covered on the top with at least an active layer 4 and provided at both lateral edges with current blocking layers 9, 10 of p-n reverse junction semiconductors arranged along the active layer for confining electric currents, and a second ridge mesa 11 formed by said first ridge mesa 8 and said current blocking layers 9, 10 and provided at both lateral edges with a semi-insulating layer 13.

Cette invention est un laser à semi-conducteur enfoui fonctionnant de façon stable et fiable à une température élevée durant une période de temps prolongée. Le laser de l'invention comprend un substrat semi-conducteur 2, un premier mésa à crête 8 formé sur ce substrat 2, ce premier mésa à crête 8 étant recouvert d'au moins une couche active 4 et portant sur ses deux bords latéraux les couches électriquement isolantes 9, 10 de jonctions p-n montées le long de la couche active pour confiner les courants électriques, et un second mésa à crête 11 formé par ce premier mésa à crête 8 et ces couches électriquement isolantes 9, 10 qui porte une couche semi-isolante 13 sur ses deux bords latéraux.

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