C-plane sapphire method and apparatus

Details C-plane sapphire method and apparatus C-plane sapphire method and apparatus

C - Chemistry, Metallurgy

30

B

C30B 15/34 (2006.01) C30B 29/20 (2006.01)

Patent

CA 2663382

A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.

L'invention concerne un procédé et un appareil pour la production de saphir à monocristal dans le plan C. Le procédé et l'appareil peuvent utiliser des techniques de croissance avec avance de film défini par les bords pour la production d'un matériau monocristal présentant une faible polycristallinité et/ou une faible densité de dislocation.

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