Cadmium telluride compensated with magnesium or beryllium

Details Cadmium telluride compensated with magnesium or beryllium Cadmium telluride compensated with magnesium or beryllium

C - Chemistry, Metallurgy

30

B

148/3.6

C30B 31/00 (2006.01) C03C 3/32 (2006.01) C30B 11/00 (2006.01) G02B 6/10 (2006.01)

Patent

CA 1076460

CADMIUM TELLURIDE COMPENSATED BY MAGNESIUM OR BERYLLIUM WHICH MAY BE DOPED AND ITS APPLICATIONS Abstract of the Disclosure Cadmium telluride forming a single-crystal intrinsic semiconductor having high resistivity contains at least one metal selected from the group comprising beryllium and magnesium having a concentration of less than 5 x 1020 atoms per cm3 as well as a doping agent selected from the group comprising the chloride of cadmium, zinc, magnesium, beryllium and aluminum and is employed in the fabrication of infrared windows or quantum detectors. -1-

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