Capacitance diode

H - Electricity – 01 – L

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356/25

H01L 29/38 (2006.01) H01L 29/93 (2006.01)

Patent

CA 1130470

18.6.79 1 PHD.78-103 "ABSTRACT": " Capacitance diode". A capacitance diode having an epitaxial layer of a first conductivity type provided on a substrate in which a doping profile is formed by controlled doping during the growth, and a surface zone of the second con- ductivity type which forms a p-n junction with the epitaxial layer. According to the invention the doping profile in the epitaxial layer varies according to the equation Image wherein x is the distance from the p-n junction in /um, xo is the width of the depletion zone in /um at a voltage -UD across the p-n junction, wherein UD is the diffusion voltage of the p-n junction, and k, n and .beta. are constants. As a result of this a very low frequency deviation is obtained which does not change sign.

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