Capacitance diode

Details Capacitance diode Capacitance diode

H - Electricity

01

L

356/25

H01L 29/00 (2006.01) H01L 29/93 (2006.01)

Patent

CA 1130469

10.6.1979 1 PHD 78.102 ABSTRACT: A capacitance diode having a substrate of a first conductivity type, an epitaxial layer of the first conductivity type present thereon, a first zone of the first conductivity type diffused therein and a second surface zone of the second opposite conduc- tivity type forming a p-n junction with the first zone. According to the invention, the doping profile in the first zonevaries to an approximation according to the equation Image where No is the doping concentration of the first zone at the p-n junction, N is the doping concentration ofthe epitaxial layer, and x is the distance from the p-n junction, where No ? 24 NE. As a result of this, a low frequency deviation is obtained which does not change sign.

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