G - Physics – 01 – R
Patent
G - Physics
01
R
G01R 27/26 (2006.01)
Patent
CA 2194956
A capacitance measuring device comprises a MOS transistor having a source, drain, and gate; a first capacitor C1 connected between the gate and the drain so that charge is coupled from said drain onto said gate; and a second capacitor C2 connected to a source of gate voltage VG and to the gate. One of the first and second capacitors has a known capacitance and the other has an unknown capacitance. A DC voltage is supplied between the source and drain to cause a saturation current to flow therebetween. The ratio .delta.VG/.delta.Vd for the saturation current, where VG is the applied gate voltage, and Vd is the drain voltage, is measured and the unknown capacitance derived therefrom.
Un dispositif de mesure capacitive comprend un transistor MOS doté d'une source, d'un drain et d'une porte; un premier condensateur C¿1? connecté entre la porte et le drain de façon à coupler la charge provenant de ce drain sur cette porte; et un deuxième condensateur C¿2?, connecté à une source de tension de porte V¿G? et à la porte. Un des condensateurs présente une capacitance connue et l'autre, une capacitance inconnue. Une tension CC est appliquée entre la source et le drain pour faire s'écouler entre eux un courant de saturation. Le rapport .delta.V¿G?/.delta.V¿d? concernant ce courant de saturation, où V¿G? représente la tension de porte appliquée et V¿d? la tension de drain, est mesuré, ce qui permet de calculer la capacitance inconnue.
Marks & Clerk
Mitel Corporation
LandOfFree
Capacitive measuring device with mosfet does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Capacitive measuring device with mosfet, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitive measuring device with mosfet will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1740184