G - Physics – 01 – L
Patent
G - Physics
01
L
73/3
G01L 1/14 (2006.01) G01L 9/00 (2006.01)
Patent
CA 2006672
A pressure sensor (210) utilizing capacitance variations to sense pressure variations of the silicon- glass-silicon type (Fig. 3) including a conductive silicon substrate (212), a conductive silicon diaphragm (211) and a glass dielectric layer (213) therebetween forming a spacing wall (216) between them, in which dielectric drift and parasitic (non-pressure sensitive) capacitance is minimized by including a very thin, third, symmetrical, silicon, capacitive plate (220) in the glass wall (216). The third conductive plate encircles the central region (Cc) of the sensor and is located outside of it. Improved assembly techniques, including all symmetrical planar layers, for higher manufacturing yield and better long term reliability are also disclosed.
Grantham Daniel H.
Latina Mario S.
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
United Technologies Corporation
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