Capacitor memory with an amplified cell signal

Details Capacitor memory with an amplified cell signal Capacitor memory with an amplified cell signal

G - Physics

11

C

352/82.4

G11C 11/24 (2006.01) G11C 11/403 (2006.01)

Patent

CA 1114504

CAPACITOR MEMORY WITH AN AMPLIFIED CELL SIGNAL ABSTRACT OF THE DISCLOSURE A memory is produced which has a series circuit in- cluding charge storage means, an impedance and switching means and an amplifier having an input connected to the series circuit at a point between the charge storage means and the impedance and an output coupled to a bit/sense line. The switching means is controlled by a pulse from a word line. The series circuit intercon- nects the bit/sense line and a point of reference poten- tial. In a preferred embodiment, the switching means is a first field effect transistor having its gate elec- trode connected to the word line and the amplifier is a second field effect transistor having its gate electrode connected to the series circuit at a point between the charge storage means and the impedance and having one of its current carrying electrodes coupled to the bit/sense line and its other current carrying electrode coupled to a point of reference potential.

300415

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