Capacitor storage memory

Details Capacitor storage memory Capacitor storage memory

G - Physics

11

C

352/82.4

G11C 11/24 (2006.01)

Patent

CA 1095621

CAPACITOR STORAGE MEMORY ABSTRACT OF THE DISCLOSURE: A semiconductor memory produced in a unipolar technology includes a cell which has an inversion capacitor with one terminal connected to a bit/sense line, the other terminal is coupled to a source of charges by a pulse from a word line. To provide a word organized array of these cells, each word includes a source of charges produced at the surface of a semiconductor substrate and plurality of inversion capacitors are formed also at the surface of the semiconductor in spaced apart relationship from the charge source. Information is written into the capacitors by applying voltages of two different magnitudes, representing 1 and 0 bits of infor- mation, to one terminal of the capacitors while a word pulse produces in- version layers at the surface of the substrate between the capacitors to interconnect serially the charge source with each of the capacitors. The capacitors having the larger voltage store the greater amount of charge. This charge can then be detected by measuring the voltage across the storage capacitors when a word pulse again connects the charge source with each of the capacitors.

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