Capping layer for recrystallization process

Details Capping layer for recrystallization process Capping layer for recrystallization process

H - Electricity

01

L

356/182, 117/86,

H01L 21/205 (2006.01) C23C 16/24 (2006.01) C30B 33/00 (2006.01) H01L 21/20 (2006.01) H01L 21/268 (2006.01)

Patent

CA 1333042

An improved method for crystallizing amorphous or polycrystalline material is disclosed, which method employs a novel intermediate product. A film of material to be crystallized is formed on a substrate. A porous silica cap is formed over the film. The resultant intermediate product is heated to melt the film which crystallizes upon cooling. Gases generated during melting of the film escape through the porous cap which also functions to prevent deleterious agglomeration of the material while it is in a molten state.

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