Carbon nanotube field effect transistor and method of making...

C - Chemistry – Metallurgy – 01 – B

Patent

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C01B 31/02 (2006.01) B05D 1/00 (2006.01) B05D 3/04 (2006.01) H01L 29/16 (2006.01) H01L 29/772 (2006.01)

Patent

CA 2598050

This invention relates to field effect transistors having carbon nanotube contacts and to a method of making these field effect transistors. The field effect transistors have better contacts as the source and drains as well as the bridge are made of carbon nanotubes. The fabrication of the proposed embodiment becomes possible by using a fabrication process which involves exposing the structure to two different temperatures.

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