H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/86 (2006.01) B81B 3/00 (2006.01) B82B 1/00 (2006.01) G11C 13/02 (2006.01) H01L 29/423 (2006.01) H01L 51/05 (2006.01)
Patent
CA 2600016
A resonant transistor includes a substrate, a source and a drain formed on the substrate, an input electrode and a carbon nanotube gate. A gap is formed between the source and the drain. The input electrode is formed on the substrate. The carbon nanotube gate is clamped on one end by a contact electrode and positioned, preferably cantilevered, over the gap and over the input electrode.
Un transistor résonnant comprend un substrat, une source et un drain formé sur le substrat, une électrode d'entrée et une porte en nanotube de carbone. Un espace est formé entre la source et le drain. L'électrode d'entrée est formée sur le substrat, la porte en nanotube de carbone est fixée sur une extrémité par une électrode de contact et positionnée, de préférence en porte-à-faux, au-dessus de l'espace et au-dessus de l'électrode d'entrée.
Northrop Grumman Corporation
Osler Hoskin & Harcourt Llp
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