Carrier freezeout field-effect device

Details Carrier freezeout field-effect device Carrier freezeout field-effect device

H - Electricity

01

L

356/29

H01L 29/76 (2006.01) H01L 29/167 (2006.01) H01L 29/66 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1201536

- 11 - CARRIER FREEZEOUT FIELD-EFFECT DEVICE Abstract A buried-channel MOSFET device 10 is cooled sufficiently to experience majority carrier freezeout in the channel region 30 (e.g. 10°k). It is appropriately fabricated and biased to form a buried-channel 40. when the gate 26 is pulsed, there appears in the buried channel 40 a transient conducting condition which lasts for on the order of 10-8 second or more and may therefore be used for subnanosecond switching functions. The switching energy needed for turning the device 10 on is very low, of the same order of magnitude as for Josephson junction devices. Turn-on is dependent mostly on the height of the switching pulse, rather than upon a voltage threshold relative to the source voltage. This makes possible a large scale integration of such devices with the same switching voltage as that required for a single device. (FIG. 1).

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