Cathode mounting for ion source with indirectly heated cathode

Details Cathode mounting for ion source with indirectly heated cathode Cathode mounting for ion source with indirectly heated cathode

H - Electricity

01

J

H01J 37/30 (2006.01) H01J 27/08 (2006.01) H01J 37/317 (2006.01) H01L 21/77 (2006.01)

Patent

CA 2216818

An ion source embodying the present invention is for use in an ion implanter. The ion source comprises a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber.

La présente invention est une source d'ions pour implanteurs d'ions. La source de l'invention comprend une chambre de confinement de gaz à parois conductrices qui délimitent une zone d'ionisation. Cette chambre est munie d'une ouverture par laquelle les ions peuvent sortir. Une base permet de positionner la chambre par rapport à une structure pour former un faisceau avec les ions qui sortent de la chambre.

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