H - Electricity – 01 – L
Patent
H - Electricity
01
L
204/96.05, 148/3
H01L 21/467 (2006.01) C23C 14/35 (2006.01)
Patent
CA 1071578
PHD 75-083 ABSTRACT In structuring thin layers by means of cathode sputtering. two effects result in redeposition of already sputtered maternal: 1. Readsorption on the layer to be structured as a result of impact of already sputtered material on inclined edges (For example of the etching mask) and 2. Back-diffusion on the layer to be structured as a result of a reduction of the average free path length of sputtered material at higher working gas pressure. As a result of this, etched structures show either non-etched parts (strong readsorption of sputtered material) or the etched structure shows, strong grooves at the edges of the etching mask (strong back-diffusion of sputtered material). With a variation of the working gas pressure an adjustability of the average free path length of the atoms of the sputtered material and hence the adjustability of the quantity of material redeposited on the basis of back-diffusion is obtained. The working gas pressure can hence be adjusted so that the etching tome to remove the readsorbed material and the material deposited again by back-diffusion is locally constant and equal etching rates are obtained for all areas of the structure to be etched. - 11 -
254583
Convertini Ursula
Dimigen Heinz
Luthje Holger
LandOfFree
Cathode sputtering method for the manufacture of etched... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Cathode sputtering method for the manufacture of etched..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cathode sputtering method for the manufacture of etched... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-758764