Ccd frame transfer device with simplified and improved well...

H - Electricity – 01 – L

Patent

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Details

H01L 31/173 (2006.01) H01L 27/148 (2006.01)

Patent

CA 2045363

Title: CCD FRAME TRANSFER DEVICE WITH SIMPLIFIED AND IMPROVED WELL AND ELECTRODE STRUCTURES ABSTRACT OF THE INVENTION: A charge coupled imaging device comprises a substrate of first conductivity type and an overlying well layer of a second opposite conductivity type first formed as an unpatterned layer. A charge transfer channel layer of the first conductivity type is also first formed as an unpatterned layer and longitudinal spaced apart channel stop regions of the second conductivity type are patterned to overlie the well layer and are in contact therewith. The substrate, the channel stops, and the well are preferably biased with respect to each other so as to effect complete charge depletion in the charge transfer and well regions for providing a vertical antiblooming drain to the substrate. A feature of the invention is a two layer electrode arrangement in which alternate electrodes transversely overlie the channels and the channel stops and are insulated therefrom and each other. Output registers at the end of the charge transfer channels provide a read out of multiple phases of the channels in ordered sequence.

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