Ccd wafers with titanium refractory metal

Details Ccd wafers with titanium refractory metal Ccd wafers with titanium refractory metal

H - Electricity

01

L

H01L 31/0264 (2006.01) H01L 31/18 (2006.01)

Patent

CA 2316459

In order to make a charge couple device including an interconnect layer to contact active areas, a first layer of a first titanium nitride layer on the active areas, and then a series of alternating titanium and titanium nitride layers are deposited to form a composite sandwich structure. This structure is less prone flaking while able to withstand high temperature treatment during fabrication of backside illuminated sensors to improve quantum efficiency and reduce dark current.

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