Ceramic composite wiring structures for semiconductor...

H - Electricity – 05 – K

Patent

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Details

H05K 1/00 (2006.01) H01L 21/48 (2006.01) H01L 23/367 (2006.01) H01L 23/373 (2006.01) H01L 23/498 (2006.01) H01L 23/64 (2006.01) H05K 7/20 (2006.01)

Patent

CA 2275972

A composite wiring structure (10) for use with at least one semiconductor device (16). The composite wiring structure having a first conductive member (12) upon which the semiconductor device can be mounted for electrical connection thereto. A dielectric member (20), made of ceramic or organo- ceramic composite material, is bonded to the first conductive member (12) and contains embedded therein a conductive network (24) and a thermal distribution network (26). A second conductive member (32) may be incorporated with the composite wiring structure, with a capacitor (64) being electrically connected between the conductive network (24) and the second conductive member (32). Bonding between the dielectric member and the conductive members may be in the form of a direct covalent bond formed at a temperature insufficient to adversely effect the structural integrity of the conductive network and the thermal distribution network.

L'invention concerne une structure (10) de câblage composite s'utilisant avec au moins un dispositif à semi-conducteur (16). La structure de câblage composite comporte un premier conducteur (12) sur lequel le semi-conducteur peut être monté, afin d'établir une connexion électrique avec ledit premier conducteur. Un élément diélectrique (20) en matériau composite céramique ou organo-céramiue est lié au premier conducteur (12) et contient un réseau conducteur (24) et un réseau de dissipation thermique (26) noyés dans le premier conducteur (12). On peut ajouter à la structure de câblage composite un second conducteur (32), un condensateur (64) connecté électriquement entre le réseau conducteur (24) et le second conducteur (32). La liaison entre l'élément diélectrique et les conducteurs peut être réalisée sous forme de liaison covalente directe, à une température insuffisante pour altérer l'intégrité structurelle du réseau conducteur et celle du réseau de dissipation thermique.

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