C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
C04B 35/515 (2006.01) C04B 35/565 (2006.01) C04B 35/584 (2006.01) C04B 35/597 (2006.01) H01L 29/12 (2006.01) C23C 16/30 (2006.01)
Patent
CA 2489199
A thin film of an amorphous silicon-based material on a substrate. The thin film has the property of any one of a carrier concentration of 10 13 to 10 18 cm 3 in a depletion zone next to the substrate, an electron mobility of 5 to 30 cm2V-1s-1, a dangling bond concentration of 10 12 to 10 19 Cm-3, no solvent-related defects, or a residual hydrogen concentration of 0 to 25 atomic %. The thin film may be used to fabricate many devices such as solar cells, light-emitting diodes, transistors, photothyristors, and integrated monolithic devices on a single chip.
Aktik Cetin
Scarlete Mihai
Bishop's University
Sixtron Advanced Materials Inc.
Smart & Biggar
Universite de Sherbrooke
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