Channel barrier modulated semiconductor device

Details Channel barrier modulated semiconductor device Channel barrier modulated semiconductor device

H - Electricity

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356/73

H01L 29/76 (2006.01) H01L 29/10 (2006.01) H01L 29/772 (2006.01) H01L 29/786 (2006.01)

Patent

CA 1163729

YO980019 ABSTRACT A field effect transistor having operating char- acteristics based on the control and modulation of the punchthrough phenomenon as well as the space charge limited conduction of channel current. The channel region between the source and the drain regions is appropriately doped p-type such that the n+ doped source and drain depletion regions overlap. The over- lapped region is such that in the absence of the gate field it has a potential barrier high enough to prevent injection of electrons for channel conduction, and low enough to be modulated to below the kT/q barrier height criterion by the gate- and the source-to-drain fields. The actual barrier height potential is deter- mined by the doping and channel length. When a pos- itive voltage is applied to the gate, the gate field will cause the potential in the channel to be reduced much the same way as the external field affects an insulator. In addition to the gate field, the source- drain potential introduces a longitudinal field which also modulates and distorts the barrier. Alternate structures have insulating substrate or semiconductor substrate and buried layer forming the barrier.

386686

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