Channeled mesa laser

Details Channeled mesa laser Channeled mesa laser

H - Electricity

01

S

345/32

H01S 5/223 (2006.01) H01S 5/227 (2006.01)

Patent

CA 1158754

ABSTRACT OF THE DISCLOSURE A heterostructure semiconductor laser (40) is characterized by having a channeled mesa (44) contiguous with the top surface (55) of the laser substrate (52). The channeled mesa (44) comprises an elongated mesa with an elongated channel (50) formed in the top surface (47, 49) of the mesa structure. The epitaxial growth of semiconductor layers over the channeled mesa produces layers having uniform thickness with smooth facet like texture and without layer surface irregularities. The channeled mesa may also be employed in the fabrication of nonplanar large optical cavity lasers.

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